RSS icon
Twitter icon
Facebook icon
Vimeo icon
YouTube icon


Export 20 results:
Author Title [ Type(Desc)] Year
Filters: Author is Elmquist, Randolph E.  [Clear All Filters]
Journal Article
Analytical determination of atypical quantized resistances in graphene p-n junctions, A. F. Rigosi, M. Marzano, A. Levy, H. M. Hill, D. K. Patel, M. Kruskopf, H. Jin, R. E. Elmquist, and D. B. Newell , Physica B, 582, 411971 (2020)
Chemical-doping-driven crossover from graphene to ``ordinary metal'' in epitaxial graphene grown on SiC, C. Chuang, Y. Yang, S. Pookpanratana, C. A. Hacker, C-T. Liang, and R. E. Elmquist , NANOSCALE, 9, 11537-11544 (2017)
Confocal laser scanning microscopy for rapid optical characterization of graphene, V. Panchal, Y. Yang, G. Cheng, J. Hu, M. Kruskopf, , A. F. Rigosi, C. Melios, A. R. Hight Walker, D. B. Newell, et al. , COMMUNICATIONS PHYSICS, 1, 83 (2018)
Development of gateless quantum Hall checkerboardp-njunction devices, D. K. Patel, M. Marzano, , M. Kruskopf, R. E. Elmquist, C-T. Liang, and A. F. Rigosi , J. Phys. D-Appl. Phys., 53, 345302 (2020)
Epitaxial graphene for quantum resistance metrology, M. Kruskopf, and R. E. Elmquist , METROLOGIA, 55, R27-R36 (2018)
Examining epitaxial graphene surface conductivity and quantum Hall device stability with Parylene passivation, A. F. Rigosi, C-I. Liu, B. Yi Wu, H-Y. Lee, M. Kruskopf, Y. Yang, H. M. Hill, J. Hu, E. G. Bittle, J. Obrzut, et al. , MICROELECTRONIC ENGINEERING, 194, 51-55 (2018)
Gateless and reversible Carrier density tunability in epitaxial graphene devices functionalized with chromium tricarbonyl, A. F. Rigosi, M. Kruskopf, H. M. Hill, H. Jin, B-Y. Wu, P. E. Johnson, S. Zhang, M. Berilla, A. R. Hight Walker, C. A. Hacker, et al. , Carbon, 142, 468-474 (2019)
Graphene Devices for Tabletop and High-Current Quantized Hall Resistance Standards, A. F. Rigosi, A. R. Panna, S. U. Payagala, M. Kruskopf, M. E. Kraft, G. R. Jones, B-Y. Wu, H-Y. Lee, Y. Yang, J. Hu, et al. , IEEE Trans. Instrum. Meas., 68, 1870-1878 (2019)
Measuring the dielectric and optical response of millimeter-scale amorphous and hexagonal boron nitride films grown on epitaxial graphene, A. F. Rigosi, H. M. Hill, N. R. Glavin, S. J. Pookpanratana, Y. Yang, A. G. Boosalis, J. Hu, A. Rice, A. A. Allerman, N. V. Nguyen, et al. , 2D MATERIALS, 5, 011011 (2018)
Next-generation crossover-free quantum Hall arrays with superconducting interconnections, M. Kruskopf, A. F. Rigosi, A. R. Panna, M. Marzano, D. Patel, H. Jin, D. B. Newell, and R. E. Elmquist , Metrologia, 56, 065002 (2019)
Probing the dielectric response of the interfacial buffer layer in epitaxial graphene via optical spectroscopy, H. M. Hill, A. F. Rigosi, S. Chowdhury, Y. Yang, N. V. Nguyen, F. Tavazza, R. E. Elmquist, D. B. Newell, and A. R. Hight Walker , PHYSICAL REVIEW B, 96 (2017)
Quantum Hall device data monitoring following encapsulating polymer deposition, A. F. Rigosi, C-I. Liu, B. Yi Wu, H-Y. Lee, M. Kruskopf, Y. Yang, H. M. Hill, J. Hu, E. G. Bittle, J. Obrzut, et al. , DATA IN BRIEF, 20, 1201-1208 (2018)
Quantum transport in graphene p-n junctions with moire superlattice modulation, J. Hu, A. F. Rigosi, J. U. Lee, H-Y. Lee, Y. Yang, , R. E. Elmquist, and D. B. Newell , PHYSICAL REVIEW B, 98, 045412 (2018)
Towards epitaxial graphene p-n junctions as electrically programmable quantum resistance standards, J. Hu, A. F. Rigosi, M. Kruskopf, Y. Yang, B-Y. Wu, J. Tian, A. R. Panna, H-Y. Lee, S. U. Payagala, G. R. Jones, et al. , SCIENTIFIC REPORTS, 8, 15018 (2018)
Two-Terminal and Multi-Terminal Designs for Next-Generation Quantized Hall Resistance Standards: Contact Material and Geometry, M. Kruskopf, A. F. Rigosi, A. R. Panna, D. K. Patel, H. Jin, M. Marzano, M. Berilla, D. B. Newell, and R. E. Elmquist , IEEE Trans. Electron Devices, 66, 3973-3977 (2019)