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Publications

Export 13 results:
Author Title [ Type(Desc)] Year
Filters: Author is Newell, David B.  [Clear All Filters]
Conference Paper
Epitaxial Graphene for High-Current QHE Resistance Standards, M. Kruskopf, J. Hu, B-Y. Wu, Y. Yang, H-Y. Lee, A. F. Rigosi, D. B. Newell, and R. E. Elmquist , 2018 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS (CPEM 2018) (2018)
Epitaxial Graphene p-n Junctions, J. Hu, M. Kruskopf, Y. Yang, B-Y. Wu, J. Tian, A. Panna, A. F. Rigosi, H-Y. Lee, S. Payagala, G. R. Jones, et al. , 2018 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS (CPEM 2018) (2018)
A Table-Top Graphene Quantized Hall Standard, A. F. Rigosi, A. R. Panna, S. U. Payagala, G. R. Jones, M. E. Kraft, M. Kruskopf, B-Y. Wu, H-Y. Lee, Y. Yang, D. G. Jarrett, et al. , 2018 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS (CPEM 2018) (2018)
Journal Article
Confocal laser scanning microscopy for rapid optical characterization of graphene, V. Panchal, Y. Yang, G. Cheng, J. Hu, M. Kruskopf, , A. F. Rigosi, C. Melios, A. R. Hight Walker, D. B. Newell, et al. , COMMUNICATIONS PHYSICS, 1, 83 (2018)
Examining epitaxial graphene surface conductivity and quantum Hall device stability with Parylene passivation, A. F. Rigosi, C-I. Liu, B. Yi Wu, H-Y. Lee, M. Kruskopf, Y. Yang, H. M. Hill, J. Hu, E. G. Bittle, J. Obrzut, et al. , MICROELECTRONIC ENGINEERING, 194, 51-55 (2018)
Gateless and reversible Carrier density tunability in epitaxial graphene devices functionalized with chromium tricarbonyl, A. F. Rigosi, M. Kruskopf, H. M. Hill, H. Jin, B-Y. Wu, P. E. Johnson, S. Zhang, M. Berilla, A. R. Hight Walker, C. A. Hacker, et al. , Carbon, 142, 468-474 (2019)
Graphene Devices for Tabletop and High-Current Quantized Hall Resistance Standards, A. F. Rigosi, A. R. Panna, S. U. Payagala, M. Kruskopf, M. E. Kraft, G. R. Jones, B-Y. Wu, H-Y. Lee, Y. Yang, J. Hu, et al. , IEEE Trans. Instrum. Meas., 68, 1870-1878 (2019)
Measuring the dielectric and optical response of millimeter-scale amorphous and hexagonal boron nitride films grown on epitaxial graphene, A. F. Rigosi, H. M. Hill, N. R. Glavin, S. J. Pookpanratana, Y. Yang, A. G. Boosalis, J. Hu, A. Rice, A. A. Allerman, N. V. Nguyen, et al. , 2D MATERIALS, 5, 011011 (2018)
Probing the dielectric response of the interfacial buffer layer in epitaxial graphene via optical spectroscopy, H. M. Hill, A. F. Rigosi, S. Chowdhury, Y. Yang, N. V. Nguyen, F. Tavazza, R. E. Elmquist, D. B. Newell, and A. R. Hight Walker , PHYSICAL REVIEW B, 96 (2017)
Quantum Hall device data monitoring following encapsulating polymer deposition, A. F. Rigosi, C-I. Liu, B. Yi Wu, H-Y. Lee, M. Kruskopf, Y. Yang, H. M. Hill, J. Hu, E. G. Bittle, J. Obrzut, et al. , DATA IN BRIEF, 20, 1201-1208 (2018)
Quantum transport in graphene p-n junctions with moire superlattice modulation, J. Hu, A. F. Rigosi, J. U. Lee, H-Y. Lee, Y. Yang, , R. E. Elmquist, and D. B. Newell , PHYSICAL REVIEW B, 98, 045412 (2018)
Towards epitaxial graphene p-n junctions as electrically programmable quantum resistance standards, J. Hu, A. F. Rigosi, M. Kruskopf, Y. Yang, B-Y. Wu, J. Tian, A. R. Panna, H-Y. Lee, S. U. Payagala, G. R. Jones, et al. , SCIENTIFIC REPORTS, 8, 15018 (2018)
Two-Terminal and Multi-Terminal Designs for Next-Generation Quantized Hall Resistance Standards: Contact Material and Geometry, M. Kruskopf, A. F. Rigosi, A. R. Panna, D. K. Patel, H. Jin, M. Marzano, M. Berilla, D. B. Newell, and R. E. Elmquist , IEEE Trans. Electron Devices, 66, 3973-3977 (2019)