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Publications

Export 13 results:
Author Title [ Type(Asc)] Year
Filters: Author is Yang, Yanfei  [Clear All Filters]
Journal Article
Towards epitaxial graphene p-n junctions as electrically programmable quantum resistance standards, J. Hu, A. F. Rigosi, M. Kruskopf, Y. Yang, B-Y. Wu, J. Tian, A. R. Panna, H-Y. Lee, S. U. Payagala, G. R. Jones, et al. , SCIENTIFIC REPORTS, 8, 15018 (2018)
Quantum transport in graphene p-n junctions with moire superlattice modulation, J. Hu, A. F. Rigosi, J. U. Lee, H-Y. Lee, Y. Yang, , R. E. Elmquist, and D. B. Newell , PHYSICAL REVIEW B, 98, 045412 (2018)
Quantum Hall device data monitoring following encapsulating polymer deposition, A. F. Rigosi, C-I. Liu, B. Yi Wu, H-Y. Lee, M. Kruskopf, Y. Yang, H. M. Hill, J. Hu, E. G. Bittle, J. Obrzut, et al. , DATA IN BRIEF, 20, 1201-1208 (2018)
Probing the dielectric response of the interfacial buffer layer in epitaxial graphene via optical spectroscopy, H. M. Hill, A. F. Rigosi, S. Chowdhury, Y. Yang, N. V. Nguyen, F. Tavazza, R. E. Elmquist, D. B. Newell, and A. R. Hight Walker , PHYSICAL REVIEW B, 96 (2017)
Measuring the dielectric and optical response of millimeter-scale amorphous and hexagonal boron nitride films grown on epitaxial graphene, A. F. Rigosi, H. M. Hill, N. R. Glavin, S. J. Pookpanratana, Y. Yang, A. G. Boosalis, J. Hu, A. Rice, A. A. Allerman, N. V. Nguyen, et al. , 2D MATERIALS, 5, 011011 (2018)
Graphene Devices for Tabletop and High-Current Quantized Hall Resistance Standards, A. F. Rigosi, A. R. Panna, S. U. Payagala, M. Kruskopf, M. E. Kraft, G. R. Jones, B-Y. Wu, H-Y. Lee, Y. Yang, J. Hu, et al. , IEEE Trans. Instrum. Meas., 68, 1870-1878 (2019)
Examining epitaxial graphene surface conductivity and quantum Hall device stability with Parylene passivation, A. F. Rigosi, C-I. Liu, B. Yi Wu, H-Y. Lee, M. Kruskopf, Y. Yang, H. M. Hill, J. Hu, E. G. Bittle, J. Obrzut, et al. , MICROELECTRONIC ENGINEERING, 194, 51-55 (2018)
Confocal laser scanning microscopy for rapid optical characterization of graphene, V. Panchal, Y. Yang, G. Cheng, J. Hu, M. Kruskopf, , A. F. Rigosi, C. Melios, A. R. Hight Walker, D. B. Newell, et al. , COMMUNICATIONS PHYSICS, 1, 83 (2018)
Chemical-doping-driven crossover from graphene to ``ordinary metal'' in epitaxial graphene grown on SiC, C. Chuang, Y. Yang, S. Pookpanratana, C. A. Hacker, C-T. Liang, and R. E. Elmquist , NANOSCALE, 9, 11537-11544 (2017)