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Publications

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Author Title [ Type(Asc)] Year
Filters: Author is Lee, Hsin-Yen  [Clear All Filters]
Journal Article
Towards epitaxial graphene p-n junctions as electrically programmable quantum resistance standards, J. Hu, A. F. Rigosi, M. Kruskopf, Y. Yang, B-Y. Wu, J. Tian, A. R. Panna, H-Y. Lee, S. U. Payagala, G. R. Jones, et al. , SCIENTIFIC REPORTS, 8, 15018 (2018)
Quantum transport in graphene p-n junctions with moire superlattice modulation, J. Hu, A. F. Rigosi, J. U. Lee, H-Y. Lee, Y. Yang, , R. E. Elmquist, and D. B. Newell , PHYSICAL REVIEW B, 98, 045412 (2018)
Quantum Hall device data monitoring following encapsulating polymer deposition, A. F. Rigosi, C-I. Liu, B. Yi Wu, H-Y. Lee, M. Kruskopf, Y. Yang, H. M. Hill, J. Hu, E. G. Bittle, J. Obrzut, et al. , DATA IN BRIEF, 20, 1201-1208 (2018)
Graphene Devices for Tabletop and High-Current Quantized Hall Resistance Standards, A. F. Rigosi, A. R. Panna, S. U. Payagala, M. Kruskopf, M. E. Kraft, G. R. Jones, B-Y. Wu, H-Y. Lee, Y. Yang, J. Hu, et al. , IEEE Trans. Instrum. Meas., 68, 1870-1878 (2019)
Examining epitaxial graphene surface conductivity and quantum Hall device stability with Parylene passivation, A. F. Rigosi, C-I. Liu, B. Yi Wu, H-Y. Lee, M. Kruskopf, Y. Yang, H. M. Hill, J. Hu, E. G. Bittle, J. Obrzut, et al. , MICROELECTRONIC ENGINEERING, 194, 51-55 (2018)
Comparison Between NIST Graphene and AIST GaAs Quantized Hall Devices, T. Oe, A. F. Rigosi, M. Kruskopf, B-Y. Wu, H-Y. Lee, Y. Yang, R. E. Elmquist, N-hisa. Kaneko, and D. G. Jarrett , IEEE Trans. Instrum. Meas., 69, 3103–3108 (2020)