Phonon scattering induced carrier resistivity in twisted double-bilayer graphene

In this work we carry out a theoretical study of the phonon-induced resistivity in twisted double bilayer graphene (TDBG), in which two Bernal-stacked bilayer graphene devices are rotated relative to each other by a small angle theta. We show that at small twist angles (theta similar to 1 degrees) the effective mass of the TDBG system is greatly enhanced, leading to a drastically increased phonon-induced resistivity in the high-temperature limit where phonon scattering leads to a linearly increasing resistivity with increasing temperature. We also discuss possible implications of our theory on superconductivity in such a system and provide an order of magnitude estimation of the superconducting transition temperature.