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Accessing ratios of quantized resistances in graphene p-n junction devices using multiple terminals

TitleAccessing ratios of quantized resistances in graphene p-n junction devices using multiple terminals
Publication TypeJournal Article
Year of Publication2020
AuthorsD. Patel, M. Marzano, , H. M. Hill, M. Kruskopf, H. Jin, J. Hu, D. B. Newell, C-T. Liang, R. Elmquist, and A. F. Rigosi
JournalAIP Adv.
Volume10
Pagination025112
Date PublishedFEB 1
Type of ArticleArticle
Abstract

The utilization of multiple current terminals on millimeter-scale graphene p-n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the v = 2 plateau (R-H approximate to 12 906 Omega). These fractions take the form a/bR(H) and can be determined both analytically and by simulations. These experiments validate the use of either the LTspice circuit simulator or the analytical framework recently presented in similar work. Furthermore, the production of several devices with large-scale junctions substantiates the approach of using simple ultraviolet lithography to obtain junctions of sufficient sharpness. (C) 2020 Author(s).

DOI10.1063/1.5138901