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Detection of a single-charge defect in a metal-oxide-semiconductor structure using vertically coupled Al and Si single-electron transistors

TitleDetection of a single-charge defect in a metal-oxide-semiconductor structure using vertically coupled Al and Si single-electron transistors
Publication TypeJournal Article
Year of Publication2009
AuthorsL. Sun, and B. E. Kane
JournalPhys. Rev. B
Volume80
Pagination5
Date Publishedoct
ISSN1098-0121
Keywords2009, Single Fellow
Abstract

An Al-AlO\_x-Al single-electron transistor (SET) acting as the gate of a narrow (\~{} 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET) can induce a vertically aligned Si SET at the Si/SiO\_2 interface near the MOSFET channel conductance threshold. By using such a vertically coupled Al and Si SET system, we have detected a single-charge defect which is tunnel-coupled to the Si SET. By solving a simple electrostatic model, the fractions of each coupling capacitance associated with the defect are extracted. The results reveal that the defect is not a large puddle or metal island, but its size is rather small, corresponding to a sphere with a radius less than 1 nm. The small size of the defect suggests it is most likely a single-charge trap at the Si/SiO\_2 interface. Based on the ratios of the coupling capacitances, the interface trap is estimated to be about 20 nm away from the Si SET.

URLhttp://prb.aps.org/abstract/PRB/v80/i15/e153310 http://arxiv.org/abs/0908.2479