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An improved trap for microwave-driven two-qubit gates

May 10, 2016 - 2:00pm
Speaker: 
David T. C. Allcock
Institution: 
NIST Ion Storage Group

A two-qubit entangling gate using near-field microwaves has been demonstrated at a fidelity of 0.76(3) [Ospelkaus et al. Nature 476, 181 (2011)].  The challenge now is to improve this fidelity to fault-tolerant levels.  In order to achieve this we have redesigned the trapping system to incorporate many technical improvements.  These include Argon ion guns for surface cleaning, a flow cryostat to cool the trap and low loss microwave feeds.  Initial results from the trap will be presented.
In addition I will give an overview of other QIP-related work we are doing at NIST including:
- Coupling of two and three ions trapped in separate wells.
- Compact, high power semiconductor lasers for Mg ion trapping.
- Hydrogen treated photonic crystal fibre for high power UV.
- Integration of a superconducting nanowire photon detector into an ion trap.​

PSC 2136
College Park, MD 20742